Some Basics of Electrical, Electronics and DLC

Some basics to help review your knowledge in electrical, Electronics and DLC. Suitable for ECE, EEE, EIE and related circuit branches.

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Index

• Basics
  • Ohm's Law
  • Resistors
  • Capacitor
  • Inductor
  • RLC Circuit
  • Voltage Divider
  • Series/Parallel
    • Inductors in Series
    • Inductors in Parallel
    • Capacitors in Series
    • Capacitors in Parallel
  • Thevenin's Theorem
  • Norton's Theorem
• A/C Circuits
  • A/C Response of Capacitor
  • A/C Response of Inductor
  • Caps of Various Capacitances
  • Caps w/ Various Frequencies
  • Inductors of Various Inductances
  • Inductors w/ Various Frequencies
  • Impedances of Same Magnitude
  • Series Resonance
  • Parallel Resonance
• Passive Filters
  • High-Pass Filter (RC)
  • High-Pass Filter response (RC)
  • Low-Pass Filter (RC)
  • High-Pass Filter (RL)
  • Low-Pass Filter (RL)
  • Band-Pass Filter
  • Notch Filter
  • Twin-T Filter
  • Crossover
• Other Passive Circuits
  • 3-Way Light Switches
  • 3- and 4-Way Light Switches
  • Differentiator
  • Wheatstone Bridge
  • Critically Damped RLC
  • Current Source
  • Transformers
    • Transformer
    • Step-Up Transformer
    • Step-Down Transformer
    • Long Distance Power Transmission
    • Transformer w/ DC
  • Inductive Kickback
  • Blocking Inductive Kickback
  • Power Factor
  • Power Factor Correction
  • LC Ladder
  • Phase-Sequence Network
• Diodes
  • Diode
  • Diode I/V Curve
  • Half-Wave Rectifier
  • Full-Wave Rectifier
  • Full-Wave Rectifier w/ Filter
  • Diode Limiter
  • Zener Diodes
    • Zener I/V Curve
    • Zener Voltage Reference
    • Zener Voltage Reference w/ Follower
  • DC Restoration
  • Blocking Inductive Kickback
  • Spike Generator
  • Voltage Multipliers
    • Voltage Doubler
    • Voltage Tripler
    • Voltage Quadrupler
  • AM Detector
  • Waveform Clipper
  • Triangle-to-Sine Converter
• Op-Amps
  • Op-Amp
  • Op-Amp Feedback
  • Amplifiers
    • Inverting Amplifier
    • Noninverting Amplifier
    • Follower
    • Differential Amplifier
    • Summing Amplifier
    • Log Amplifier
    • Class-D Amplifier
  • Half-Wave Rectifier (inverting)
  • Full-Wave Rectifier
  • Peak Detector
  • Integrator (inverting)
  • Differentiator (inverting)
  • Schmitt Trigger
  • Oscillators
    • Relaxation Oscillator
    • Triangle Wave Generator
    • Sawtooth Wave Generator
    • Sine Wave Generator
    • Voltage-Controlled Oscillator
    • Phase-Shift Oscillator
    • Phase-Shift Oscillator Filter
  • Negative Impedance Converter
  • Gyrator
  • Capacitance Multiplier
  • Howland Current Source
  • Current-to-Voltage Converter
  • Voltage Regulator
• MOSFETs
  • n-MOSFET
  • p-MOSFET
  • Switch
  • Source Follower
  • Current Source
  • Current Ramp
  • Current Mirror
  • Common-Source Amplifier
  • CMOS Inverter
  • CMOS Inverter (w/capacitance)
  • CMOS Inverter (slow transition)
  • CMOS Transmission Gate
  • CMOS Multiplexer
  • Sample-and-Hold
  • Delayed Buffer
  • Leading-Edge Detector
  • Switchable Filter
  • Voltage Inverter
  • Inverter Amplifier
  • Inverter Oscillator
  • Logic
    • CMOS NAND
    • CMOS NOR
    • CMOS XOR
    • CMOS Flip-Flop
    • CMOS Master-Slave Flip-Flop
    • Ternary Logic Inverter
• Transistors (Bipolar)
  • NPN Transistor (Bipolar)
  • PNP Transistor (Bipolar)
  • Switch
  • Emitter Follower
  • Common-Emitter Amplifier
  • Unity-Gain Phase Splitter
  • Schmitt Trigger
  • Current Source
  • Current Source Ramp
  • Current Mirror
  • Differential Amplifiers
    • Differential Amplifier
    • Differential Amplifier: Common-Mode Input
    • Differential Amplifier: Common-Mode w/Current Source
  • Push-Pull Follower
    • Simple Push-Pull Follower, with Distortion
    • Improved Push-Pull Follower
  • Multivibrators
    • Bistable Multivibrator (Flip-Flop)
    • Astable Multivibrator (Oscillator)
    • Monostable Multivibator (One-Shot)
  • Oscillators
    • Colpitts Oscillator
    • Hartley Oscillator
    • Emitter-Coupled LC Oscillator
  • Logic
    • RTL Inverter
    • RTL NAND
    • DTL NAND
    • TTL NAND
    • TTL NOR
    • ECL NOR/OR
• Combinational Logic
  • Exclusive OR
  • Half Adder
  • Full Adder
  • 1-of-4 Decoder
  • 2-to-1 Mux
  • Majority Logic
  • 2-Bit Comparator
  • 7-Segment LED Decoder
• Sequential Logic
  • Flip-Flops
    • SR Flip-Flop
    • Clocked SR Flip-Flop
    • Master-Slave Flip-Flop
    • Edge-Triggered D Flip-Flop
    • JK Flip-Flop
  • Counters
    • 4-Bit Ripple Counter
    • 8-Bit Ripple Counter
    • Synchronous Counter
    • Decimal Counter
    • Gray Code Counter
    • Johnson Counter / Decade Counter
  • Divide-by-2
  • Divide-by-3
  • Traffic Light
  • Dynamic RAM
• 555 Timer Chip
  • 555 Square Wave Generator
  • 555 Internals
  • 555 Sawtooth Oscillator
  • 555 Low-duty-cycle Oscillator
  • 555 Monostable Multivibrator
  • 555 Pulse Sequencer
  • 555 Pulse Width Modulator
  • 555 Schmitt Trigger (inverting)
  • 555 Missing Pulse Detector
• Transmission Lines
  • Simple Transmission Lines
  • Standing Wave on a Transmission Line
  • Termination of a Transmission Line
  • Mismatched transmission lines (Pulse)
  • Mismatched transmission lines (Standing Wave)
  • Impedance Matching (L-Section)
  • Impedance Matching (Shunt Stub)
  • Stub Frequency Response
  • Low-Pass Filter
  • Light Switch
• Memristors
  • Memristor
  • Memristor Response to Sine Wave
  • Memristor Response to Square Wave
  • Memristor Response to Triangle Wave
  • Memristor Hard-Switching 1
  • Memristor Hard-Switching 2
• Tunnel Diodes
  • Tunnel Diode I/V Curve
  • Tunnel Diode Relaxation Oscillator
• Spark Gaps
  • Sawtooth Oscillator
  • Tesla Coil
  • Marx Generator

EDC | FET | MOSFET | 2 Marks

Types of MOSFET

• Depletion MOSFET (n-type, p-type)
• Enhancement MOSFET (n-type, p-type)

Depletion MOSFET Vs Enhancement MOSFET

S. No.	D-MOSFET (n-channel)	E-MOSFET (n-channel)
1.	Negative voltage at gate	Positive voltage at gate
2.	Positive charges on the semiconductor site	Negative charges on the semiconductor site
3.	Depletion of majority carriers	Inversion layer is formed

 
JFET Vs MOSFET

S. No.	JFET (n-channel)	MOSFET (n-channel)
1.	Between Gate and channel is a PN junction forming a diode	Between gate and channel is an insulating SiO2 layer forming a small capacitor
2.	Gate is reverse biased (negative voltage for n-channel)	Gate can be given positive or negative voltage depending on mode of operation required
3.	High input impedance due to reverse biased gate	Very high impedance due to insulated gate and capacitance effect
4.	Operated only in depletion mode	Operated in depletion and enhancement mode

 Yet to be updated!

EDC | FET | JFET | 2 Marks

FET (Field Effect Transistor)

FET is a  voltage controlled, unipolar, three terminal device.

Why FET is called a unipolar device?
In UJT, either holes or electrons is responsible for conduction of current (ID) through the channel and hence called unipolar device.
In n-channel JFET, free electrons (charge carrier) in the channel alone is responsible for flow of current (drain current) whereas in p-channel JFET, holes (charge carriers) present in the channel alone is responsible for flow of current.

Why is the term "Field Effect"?
In JFET, the drain current ID is controlled by electric "field" applied across gate and source.

Types of FET

• JFET (Junction Field Effect Transistor)
• MESFET (MEtal Semiconductor FET)
• MOSFET (Metal Oxide Semiconductor FET)

JFET Biasing

• Self bias
• Voltage-divider bias

JFET Characteristics

• Transfer Characteristics (ID Vs VGS)
• Drain Characteristics (ID Vs VDS)

Pinch-off voltage
In drain characteristics,   at a constant VGS (VGS=0), the  value of VDS at which the drain current becomes constant for further increase in VDS is called pinch-off voltage.

Cut-off voltage
In drain characteristics, the value of VGS that keeps ID approximately zero is called cut-off voltage.

Characteristic parameters of JFET

1. Transconductance (gm)
2. Input resistance and capacitance
3. Drain and source resistance (rd)
4. Amplification factor (μ)
5. Power dissipation (PD)

Applications of JFET

• Can be used as switch or as amplifier as like BJTs.
• Since input impedance is high and output impedance is low, it can be used as buffer in measuring instruments.
• It has low noise capability ad hence can be used in RF amplifiers, FM tuners and other communication devices.
• Input capacitance of FET is very low and hence usedd in cascade amplifiers in measuring and test equipments.
• Used in oscillators, low frequency amplifiers and digital circuits.

EDC | SCRs | 2Marks

Latching current (IL):

During turn-on, the minimum value of anode current that must be attained so that the thyristor wil

l remain in conduction state even if gate signal is removed.

Holding current (IH):

When the gate is open, a certain value of anode current below which SCR will switch to OFF state is called holding current.

Methods to turn ON SCRs:

1. Gate triggering - SCR can be triggered into conduction mode by gate pulse signal.
2. Forward-breakover Voltage (VFBO) - When voltage across SCR (VAK) exceeds forward-breakover voltage (VFBO), SCR turns ON.

Methods to turn OFF SCRs:

1. Reverse biasing anode-cathode terminals of SCR using external supply, called forced commutation.
2. Interrupting or reducing the current through the SCR (Anode current, IA) below holding current

List of SCR ratings:

1. Forward-breakover voltage, VFBO
2. Holding current, IH
3. Gate trigger current, IG
4. Average forward current, IF(avg)
5. Reverse-breakdown voltage, VRBO

List of SCR characteristics:

1. Forward-blocking region
2. Reverse-blocking region
3. Forward-conduction region

Advantages of SCR as a switch over mechanical switch:

1. Noiseless
2. High switching speed
3. Control over current with small gate current
4. No mechanical movable contact, increasing life

Some applications of SCR:

1. Speed control of motor, dimming of lights
2. Power control
3. Half-wave and full-wave rectifiers with current and power control 

Shockley Diode Vs SCR Vs TRIAC Vs DIAC

S. No.	Shockley Diode	SCR	TRIAC	DIAC
1.	Uni-directional device	Uni-directional device	Bi-directional device	Bi-directional device
2.	No gate terminal	Gate terminal is present	Gate terminal is present	No gate terminal
3.	Basic 4 layer device	Shockley diode with gate terminal	Two SCRs in Inverse-parallel connection	Two Shockley diodes in Inverse-parallel connection (OR) Low current TRIAC without gate terminal
4.	Terminals: Anode and Cathode	Anode, Cathode and Gate	Main terminal1, Main terminal2 and Gate	Main terminal1 and Main terminal2
5.	Break-over voltage cannot be controlled	Break-over voltage can be controlled with gate signal	Break-over voltage can be controlled with gate signal	Break-over voltage cannot be controlled