Showing posts with label Industrial Electronics. Show all posts
Showing posts with label Industrial Electronics. Show all posts

October 20, 2013

Animations | Electronic Devices and Circuits

To understand clearly how electronic devices and several electronic and digital circuits work, animations will be of great help and ease. Visit falstad.com
You would need Java plugin.

Index

October 04, 2013

EDC | Oscillators

Oscillators using BJTs:
  1. RC - Phase Shift Oscillator
  2. Wien-Bridge Oscillator
  3. Hartley Oscillator
  4. Colpitts Oscillator
  5. Crystal Oscillator
 
(.pdf_494.33 KB)

September 20, 2013

September 12, 2013

EDC | FET | MOSFET | 2 Marks

Types of MOSFET
  • Depletion MOSFET (n-type, p-type)
  • Enhancement MOSFET (n-type, p-type)
Depletion MOSFET Vs Enhancement MOSFET

S. No.
D-MOSFET (n-channel)
E-MOSFET (n-channel)
 1.
Negative voltage at gate
Positive voltage at gate
 2.
Positive charges on the semiconductor site
Negative charges on the semiconductor site
 3.
Depletion of majority carriers
Inversion layer is formed
 

JFET Vs MOSFET

S. No.
JFET (n-channel)
MOSFET (n-channel)
1.
Between Gate and channel is a PN junction forming a diode
Between gate and channel is an insulating SiO2 layer forming a small capacitor
2.
Gate is reverse biased (negative voltage for n-channel)
Gate can be given positive or negative voltage depending on mode of operation required
3.
High input impedance due to reverse biased gate
Very high impedance due to insulated gate and capacitance effect
4.
Operated only in depletion mode
Operated in depletion and enhancement mode


 Yet to be updated!

September 11, 2013

EDC | FET | JFET | 2 Marks

FET (Field Effect Transistor)

FET is a  voltage controlled, unipolar, three terminal device.

Why FET is called a unipolar device?
In UJT, either holes or electrons is responsible for conduction of current (ID) through the channel and hence called unipolar device.
In n-channel JFET, free electrons (charge carrier) in the channel alone is responsible for flow of current (drain current) whereas in p-channel JFET, holes (charge carriers) present in the channel alone is responsible for flow of current.

Why is the term "Field Effect"?
In JFET, the drain current ID is controlled by electric "field" applied across gate and source.

Types of FET
  • JFET (Junction Field Effect Transistor)
  • MESFET (MEtal Semiconductor FET)
  • MOSFET (Metal Oxide Semiconductor FET)
JFET Biasing
  • Self bias
  • Voltage-divider bias
JFET Characteristics
  • Transfer Characteristics (ID Vs VGS)
  • Drain Characteristics (ID Vs VDS)
Pinch-off voltage
In drain characteristics,   at a constant VGS (VGS=0), the  value of VDS at which the drain current becomes constant for further increase in VDS is called pinch-off voltage.

Cut-off voltage
In drain characteristics, the value of VGS that keeps ID approximately zero is called cut-off voltage.

Characteristic parameters of JFET
  1. Transconductance (gm)
  2. Input resistance and capacitance
  3. Drain and source resistance (rd)
  4. Amplification factor (μ)
  5. Power dissipation (PD)
Applications of JFET
  • Can be used as switch or as amplifier as like BJTs.
  • Since input impedance is high and output impedance is low, it can be used as buffer in measuring instruments.
  • It has low noise capability ad hence can be used in RF amplifiers, FM tuners and other communication devices.
  • Input capacitance of FET is very low and hence usedd in cascade amplifiers in measuring and test equipments.
  • Used in oscillators, low frequency amplifiers and digital circuits.

September 07, 2013

EDC | Amplifiers | h-parameters

 
Parameter notation
Description
Formula
Unit
Condition
hi = h11
Input impedance
Vi/Ii
Ohm
Output Short circuited (Vout = constant)
ho = h22
Output admittance
Io/Vo
Mho
Input Open (Iin = constant)
hf = h21
Forward current gain
Io/Ii
No unit
Output short circuited (Vout = constant)
hr = h12
Voltage feedback ratio
Vi/Vo
No unit
Input Open (Iin = constant)



EDC | Amplifiers | Steps to analyze Transistor amplifier circuit

Steps to analyze Transistor amplifier circuit:

  1. Draw the circuit diagram with coupling capacitor
  2. Replace coupling capacitors, emitter bias capacitor by a short circuit
  3. Replace DC source by a short (i.e., short circuit Vcc with ground.)
  4. Identify the input terminals and output terminals (Example: In CE configuration, B-E - input terminal, C-E - output terminal)
  5. Replace the transistor by its h-parameter model
  6. Find the effective input impedance (Ri), output impedance (Ro) and hence admittance (1/Ro), Current gain (Ai), Voltage gain (Av) and Power gain (Ap).
Ri = (Vi/Ii), Ro = (Vo/Io), Ai = (Io/Ii), Av = (Vo/Vi), Ap = (Po/Pi)

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